Inductively coupled source for deriving substantially uniform plasma flux

ABSTRACT

A planar coil exciting a plasma of an r.f. vacuum plasma processor for a workpiece processed surface in a chamber includes plural turns. The coil, chamber and workpiece are arranged to produce in the chamber a magnetic flux having substantially greater density in peripheral portions of the coil and chamber than in a center portion of the chamber and coil so a substantially uniform plasma flux is incident on a processed surface of the workpiece.

FIELD OF INVENTION

The present invention relates generally to radio frequency (r.f.) vacuumplasma processors and more particularly to such a processor including aplanar plural turn excitation coil having radially displaced arcuatesegments with a geometry relative to a wavelength of an exciting r.f.source such that distributed r.f. currents and voltages in the coil arecombined to produce an electromagnetic field that causes a substantiallyuniform spatial plasma flux to be produced on a processed workpiece.

BACKGROUND ART

Various structures have been developed to supply r.f. fields fromdevices outside of a vacuum chamber to excite a gas in a plasmaprocessor to a plasma state. The r.f. fields have been derived fromelectric field sources including capacitive electrodes, electromagneticfield sources including electron cyclotron resonators, and induction,i.e., magnetic, field sources including coils. The excited plasmainteracts with a workpiece in the chamber to etch the workpiece or todeposit material on it. The workpiece can be a semiconductor waferhaving a planar circular surface or a solid dielectric, e.g., arectangular glass substrate used in flat panel displays, or a metalplate.

A processor for treating workpieces with an inductively coupled planarplasma (ICPP) source is disclosed, inter alia, by Ogle, U.S. Pat. No.4,948,458, commonly assigned with the present invention. In Ogle, themagnetic field that excites the plasma is derived from a planar coilpositioned on or adjacent to a single planar dielectric window thatextends in a direction generally parallel to the workpiece planarsurface being processed. The coil is connected to be responsive to anr.f. source having a frequency in the range of 1 to 100 MHz (typically13.56 MHz) and coupled to the coil by an impedance matching network. Thecoil is configured as a planar linear spiral having external andinternal terminals connected to be responsive to the r.f. source.Coultas et al., U.S. Pat. No. 5,304,279 discloses a similar deviceemploying plasma confinement using permanent magnets in combination withthe planar spiral coil.

Cuomo et al., U.S. Pat. No. 5,277,751 and Ogle, U.S. Pat. No. 5,277,751disclose variations of the aforementioned processors wherein the planarspiral coil is replaced by a solenoidal coil. The solenoidal coil iswound on a dielectric mandrel or the like and includes pluralhelical-like turns, a portion of which extend along the dielectricwindow surface. The remainder of the coil extends above the dielectricwindow. Opposite ends of the solenoidal coil are connected to an r.f.excitation source.

These inductive sources excite the plasma by heating electrons in theplasma region near the vacuum side of the dielectric window byoscillating inductive fields produced by the coil and coupled throughthe dielectric window. Inductive currents which heat the plasmaelectrons are derived from the r.f. magnetic fields produced by r.f.currents in the planar coil. The spatial distribution of the magneticfield is a function of the sum of the fields produced by each of theturns of the coil. The field produced by each of the turns is a functionof the magnitude of r.f. current in each turn. For the spiral designdisclosed by the Ogle '458 patent, the r.f. currents in the spiral coilare distributed to produce a ring shaped region where power is absorbedby the plasma. The ring shaped region abuts the vacuum side of thedielectric window. At low pressures, in the 1.0 to 10 mTorr range,diffusion of the plasma from the ring shaped region produces a plasmadensity peak in a central portion of the chamber, along a chamber centerline away from the window. At intermediate pressure ranges, in the 10 to100 mTorr range, gas phase collisions of electrons, ions, and neutronsin the plasma prevent substantial diffusion of the plasma chargedparticles outside of the annular region. As a result there is arelatively high plasma flux in a ring like region of the workpiece butlow plasma fluxes in the center and peripheral workpiece portions.Hence, there are substantially large plasma flux variations between thering and the volumes inside and outside of the ring.

Chen et al., U.S. Pat. No. 5,226,967 considers the adverse effects ofreduced plasma density at radial regions removed from the center of aplanar spiral coil. In Chen '967, the strength of magnetic fieldsgenerated by the planar coil and coupled to the plasma decreases alongthe chamber center line. The decrease is provided by increasing thethickness of the dielectric window center portion, relative to thethickness of other regions of the window. At pressures up to about 20mTorr, the increased thickness of the solid dielectric materialextending into the plasma shifts the ring shaped region for r.f. powerabsorption to a larger radius. The shift of the ring shaped regionposition changes the diffusion characteristics of this plasma generationregion so diffusion is more uniform across the entire processedsubstrate surface diameter, particularly at the peripheral portion ofthe substrate.

In the device of the '967 patent, an electromagnetic shield thatsupports the dielectric window decreases the plasma flux close to thecenter of the coil. This plasma flux density reduction occurs becausethe shield decreases coupling between the coil and an electromagneticfield resulting from the r.f. current applied to the coil. The magneticfields produced by the largest diameter turn of the planar sourcefrequently induce r.f. currents in the electromagnetic shield whichsupports the window, if the shield and largest turn are sufficientlyclose to each other. Power coupled to the shield results in (1) adecrease in the coupling efficiency of the r.f. excitation of the plasmaand (2) a shift of the ring shaped power absorption region to a smallerdiameter region since the magnetic field produced by the largestdiameter turn of the coil does not couple as much magnetic flux to theplasma as the inner turns. Substantial uniformity up to about 20 mTorroccurs as a result of diffusion of charged particles into the regionbelow the center of the coil, where the window is thickest. However, aspressure increases above about 20 mTorr, where charged particulardiffusion decreases appreciably, the plasma flux beneath the center ofthe coil, where the r.f. excitation is small, decreases relative to theflux in the other regions beneath the coil. Hence, there is non-uniformplasma flux on different portions of the workpiece.

The ring shaped region over which a planar coil couples r.f. power tothe plasma can be shifted to larger diameters by removing the innerturns of the planar spiral. Fukusawa et al. in an article entitled "RFSelf-Bias Characteristics in Inductively Coupled Plasma," JapaneseJournal of Applied Physics, Vol. 32 (1993), pages 6076-6079, Part 1, No.12(B), December 1993, discloses a single turn planar spiral coil forexciting gases in a plasma processor to a plasma condition. Thedisclosed coil has inner and outer dimensions of 120 and 160 mm and is0.5 mm thick and is located in the vicinity of the periphery of adielectric plate which serves as the top of the vacuum vessel. Theostensible purpose of the one turn coil is to produce a uniform plasmadensity radial distribution. However, as illustrated in FIG. 6 ofFukusawa et al., the plasma density is not particularly uniform even ata relatively low plasma processor pressure of 10 milliTorr, particularlyfor the types of r.f. excitation power which are required for plasmaetching, in the 1 kilowatt range. For 1 kilowatt r.f. excitation of thesingle turn source, disclosed by Fukusawa et al., the plasma produces asubstantial plasma density peak (of 7.5×10¹¹ ions cm⁻³), at a positionapproximately 4.0 centimeters from the center of the chamber. This peakoccurs only on one side of the center axis, creating a significantnon-radial asymmetry in the spatial distribution of the plasma. Theone-turn spiral disclosed by Fukusawa et al. results in a shift in thecoupling region to a larger diameter relative to the full spiraldisclosed by Ogle in the '458 patent. The Fukusawa et al. devices alsoexhibit a nonradial asymmetry which equals or exceeds the radialnonuniformity in the spatial distribution of the plasma densitygenerated by a full spiral. The range of pressures over which the oneturn coil can be operated is also limited since this coil relies ondiffusion to shift plasma from the ring shaped plasma generation regionnear the periphery of the chamber to the center of the chamber. Atpressures above 10 milliTorr, collisions of charged and unchargedparticles in the plasma result in a severe decrease in plasma density inthe center region of the chamber.

The Invention

In accordance with one aspect of the present invention, a vacuum plasmaprocessor has a coil with plural arcuate turns for exciting gas in theprocessor to a plasma state in response to r.f. energization of thecoil. The coil includes interior and exterior radially displacedsegments and is arranged so the magnetic flux derived from outer segmentis greater than the magnetic flux derived from the center portion of thecoil. The spatial distribution of the magnetic flux derived from theimproved coil is arranged to substantially eliminate nonradialasymmetries in the spatial distribution of the plasma compositions (orcomposition) which interact(s) with the workpiece. The spatialarrangement of the magnetic flux of the coil is able to excite spatiallyuniform plasma fluxes for pressures between 1 and 100 mTorr. The vacuumchamber is optimized to reduce coupling of magnetic flux from peripheralportions of the coil to an electromagnetic shield.

The coil has sufficient length at the frequency (i.e., the wavelength)of the r.f. source to generate a significant standing wave pattern alongthe length of the coil due to transmission line effects. Because of thetransmission line effects at least one r.f. current maximum exists inthe coil at some point along the geometric length of the coil. Themagnetic flux (which in turn generates the induction field for excitingthe plasma) produced by each coil segment is proportional to themagnitude of the r.f. current occurring in the segment. As a result, asingle loop connected to an r.f. supply is expected to produce anonradial maximum in the plasma density at a position corresponding tothe location of the coil r.f. current maximum. This type of nonradialmaximum is seen in the Fukusawa et al. data. For a coil with plural ringsegments, the plasma density spatial distribution is a function of boththe geometries of the segments and the level of r.f. current occurringin each segment. For the multiple element spiral coil disclosed by theOgle '458 patent, the spatial average of the magnetic flux produces aplasma with ring shaped plasma generation region near the center of thevacuum side of the dielectric window. Only a small degree of nonradialasymmetry is produced by the r.f. current maximum occurring in oneportion of the spiral.

In the improved planar coil of the present invention, the interior andexterior coil segments are positioned and arranged so the magneticfluxes from different regions of at least some pairs of adjacent coilturns are additive. Because these different regions are adjacent eachother, the magnetic fluxes from them add and average to a value whichproduces a uniform plasma flux across the workpiece processed surface.The elements of the coil are arranged to produce a greater degree ofmagnetic flux from the outer turns relative to the magnetic fluxproduced by the inner turns. By providing maximum magnetic flux in theouter turns and minimum flux in the smaller diameter, inner turns, theouter diameter of the ring shaped plasma generation region is extended.The proper choice of diameter size for each of these segments results ina planar coil which produces a plasma generation region which diffusesto and uniformly interacts with the workpiece processed surface. Thediameters of these ring segments are arranged to produce this uniformflux across the workpiece processed surface over a wider range ofoperating pressures, typically from 1 milliTorr to 100 milliTorr.

The production of a uniform plasma flux on the workpiece processedsurface requires correct selection of the aspect ratio of the chamber,i.e., the ratio of cylindrical chamber diameter to the distance betweenthe workpiece processed surface and the bottom of the dielectric plate(the top of the chamber). At the correct aspect ratio, the ring shapedplasma at the top of the chamber diffuses to the workpiece surface sothere is a spatially uniform plasma flux on the workpiece processedsurface. To this end, in one preferred embodiment, the chamber uppersurface above which the coil is mounted consists of only a 14.7 inchdiameter circular quartz plate window with a uniform thickness of 0.8inches. The plasma chamber is a cylindrical vessel with a metal wallhaving a 14.0 inch inner diameter. The planar coil outer diameter isabout 12 inches. The resulting one inch gap between the bottom face ofthe coil and the top face of the chamber (defined by the bottom face ofthe quartz plate) prevents the magnetic flux in the outermost turn ofthe coil from being significantly coupled to the metal chamber wall. Ametal electromagnetic shield enclosure which surrounds the planar coilis located beyond the chamber wall outer diameter so magnetic flux inthe outermost turn of the coil is not significantly coupled to theshield enclosure. The cylindrical shape of the plasma vessel assists inproducing a uniform plasma flux on the workpiece processed surface. Thespacing of the workpiece from the plasma generation region is optimizedto produce a uniform flux on the workpiece processed surface over a widerange of operating pressures. For the coil and chamber diameters listedabove, the spacing between the vacuum side of the dielectric plate andthe upper, processed workpiece surface is about 4.7 inches.

Because of the transmission line effects of the coil, a spatiallyaveraged r.f. current is produced in the coil to provide uniform plasmaexcitation over a wide range of operating pressures.

The amount of capacitive coupling from the coil to the plasma issufficiently low that there is no appreciable degradation in theuniformity of plasma flux on the workpiece processed surface. A smallamount of capacitive coupling in a predominantly inductively coupledplasma source has been found to be beneficial to the operation of thedischarge. Capacitive coupling of the r.f. voltage on the coil to theplasma through the dielectric plate is required to (1) initiate theplasma discharge and (2) stabilize a steady state plasma discharge. Thisis because the capacitive coupling introduces a small amount of higherenergy electrons in the predominantly low energy inductive discharge. Toprovide this degree of capacitive coupling without degrading the overallcoupling of the coil to the plasma, the coil r.f. voltage spatialdistribution is optimized. In one embodiments capacitive couplingoptimization is primarily accomplished by exciting the coil so it hascapacitive coupling peaks (i.e. the points with the highest r.f.voltages) at terminals of the coil in the coil center. These terminalsare connected to the r.f. excitation source.

The above and still further objects, features and advantages of thepresent invention will become apparent upon consideration of thefollowing detailed description of a specific embodiment thereof,especially when taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWING

FIG. 1 is a schematic diagram of a vacuum plasma processor of the typeemployed with the present invention;

FIGS. 2A and 2B are respectively top and perspective views of apreferred embodiment of a planar coil included in the processor of FIG.1, wherein the coil includes a split center portion, a set of ringelements near the periphery of the coil and a third ring element at anintermediate diameter;

FIG. 3 is a plot of the spatial variations in the etch rate for a 200 mmwafer processed in the chamber of FIG. 1 by using the planar coil ofFIGS. 2A and 2B;

FIG. 4 are plots of the measured ion density uniformity produced by thecoil of FIGS. 2A and 2B measured at a region near the surface of theworkpiece for operating pressures between 2.0 and 30 milliTorr;

FIGS. 5A and 5B are plots of the measured and calculated r.f. voltagesand currents respectively occurring in the planar coil of FIGS. 2A and2B during excitation of the plasma in the chamber of FIG. 1; and

FIG. 6 is a plot of the calculated r.f. currents occurring on eachsegment of the planar coil of FIGS. 2A and 2B as a function of angulardistance measured in the plane of the coil.

DESCRIPTION OF THE PREFERRED EMBODIMENT

Reference is now made to FIG. 1 of the drawing, wherein a plasmaworkpiece processor that can be used for etching a semiconductor,dielectric or metal substrate or for depositing molecules on thesubstrate is illustrated as including vacuum chamber 10, shaped as acylinder having grounded metal wall 12, metal bottom end plate 14, and acircular top plate structure 18, consisting of a dielectric windowstructure 19, having the same thickness from its center to itsperiphery. Sealing of the vacuum chamber 10 is provided by conventionalgaskets (not shown).

A suitable gas that can be excited to a plasma state is supplied to theinterior of chamber 10 from a gas source (not shown) via port 20 in sidewall 12. The interior of the chamber is maintained in a vacuumcondition, at a pressure that can vary in the range of 1-100 milliTorr,by a vacuum pump (not shown), connected to port 22 in the side wall 12.Alternatively, port 22 is located in the end plate 14. The gas in thechamber is excited to a spatially uniform plasma state by a suitableelectric source. The electric source includes a substantially planarcoil 24, usually mounted immediately above window 19 and excited by r.f.power source 26 via impedance matching network 28. Typically, r.f.source 26 has a frequency of 13.56 MHz. Workpiece 32 is fixedly mountedin chamber 10 to the surface of a substrate platen 30 which is parallelto the surface of window 19. Workpiece 32 is electrostatically clampedto the surface of substrate platen 30 by use of a DC potential providedby a DC power supply (not shown).

Surrounding planar coil 24 and extending above top end plate 18 is ametal tube or can-like shield 34, providing electromagnetic decouplingof the fields originating in coil 24 from the surrounding environment.The distance between shield 34 and the peripheral regions of coil 24 islarge enough to prevent significant absorption by shield 34 of themagnetic fields generated by the peripheral regions of coil 24.

The diameter of cylindrically shaped chamber 10 is large enough toprevent the absorption by chamber walls 12 of the magnetic fieldsgenerated by the peripheral regions of coil 24. The diameter ofdielectric window structure 19 is greater than the diameter of chamber10 such that the entire upper surface of chamber 10 is comprised ofdielectric window structure 19. The distance between the treated surfaceof workpiece 32 and the bottom surface of dielectric window structure 19is chosen to provide the most uniform plasma flux on the exposed,processed surface of the workpiece. For the preferred embodiment of theinvention, the distance between the workpiece processed surface and thebottom of the dielectric window is approximately 0.3 to 0.4 times thediameter of chamber 10.

The frequency of r.f. source 26 and the length of planar coil 24 betweenend terminals thereof connected to the source are such that the behaviorof the r.f. voltages and currents occurring in the coil can beapproximated using r.f. transmission line theory. The transmission lineeffects occur in the planar coil since each small section of the planarcoil, in combination with the dielectric surrounding it, has a finitenonzero capacitance to the plasma. Hence each coil section forms anelectrical device represented by distributed inductance and distributedcapacitance along the length of the coil. The characteristic impedanceof the transmission line formed by the planar coil is a function of thedimensions and shape, i.e., geometry, of the cross section of theconductive material which forms the planar coil, as well as thedielectric constant and thickness of the window material.

The behavior of the planar coil as a transmission line produces astanding wave pattern along the length of the coil which results invariations in the magnitude of the r.f. voltages and currents along thelength of the coil. The dependence of the magnetic flux generated by thecoil on the magnitude of these r.f. currents results in differingamounts of plasma being produced in different portions of chamber 10beneath different portions of the coil. As a result, to derive a uniformplasma using a planar coil requires the variations in the r.f. currentmagnitude flowing in different parts of the coil to be spatiallyaveraged. Spatially averaging these different current values in thedifferent parts of the coil substantially prevents nonradial asymmetriesin the plasma density, particularly at regions of high r.f. current incoil segments near the periphery of coil 24. The transmission linebehavior of the r.f. current in planar coil 24 increases the amount ofmagnetic flux generated by the peripheral coil segments relative to thecenter coil segments. This result is achieved by exciting coil 24 withr.f. so the regions of maximum r.f. current are on the peripheral coilsegments.

In the preferred embodiment, illustrated in FIGS. 2A and 2B, planar coil24 includes interior substantially semicircular loops 40 and 42 andperipheral substantially circular segments 46 and 48 and an intermediatesubstantially circular segment 44. Loops 40 and 42 form half turns ofcoil 24, while each of loops 44, 46 and 48 forms almost a complete fullturn; the full and half turns are connected in series with each other.All of segments 40, 42, 44, 46 and 48 are coaxial with central coil axis50, coincident with the center axis of chamber 10. Opposite excitationterminals 52 and 54, in the center portion of coil 24, are respectivelycoupled by leads 58 and 56 to opposite terminals of r.f. source 26 viamatching network 28 and one electrode of capacitor 80, the otherelectrode of which is grounded. Terminal 60, at the end of segment 40opposite from terminal 52, is connected to end terminal 66 of outer loopsegment 48 by conductive strap 64 which is located in a region slightlyabove the plane of coil 24 and does not touch any of the coil segmentswhich run beneath it so the strap is electrically insulated from coil24, except at terminals 60 and 66. Segment 48 has a second terminal 68slightly less than 360° from terminal 66; terminal 68 is connected toterminal 70 of loop segment 46 via strap 72. Loop 46, having an angularextent of almost 360°, has a second end terminal 74 connected toterminal 76 of loop 44 via strap 78. Loop 44, having an angular extentof almost 360°, has a second end terminal 80 which is connected by strap82 to terminal 62, at the end of segment 42 opposite from terminal 54.

The dimensions of substantially circular loop segments 44, 46 and 48 aredetermined by the wavelength of the r.f. voltage and current supplied bysource 26 to coil 24 and by the dimensions of the workpiece. Thewavelength of the r.f. in the coil is some fraction (typically 0.5-0.7)of the free space wavelength. In the preferred embodiment of coil 24,the diameter of workpiece 32 is less than the diameter of circular loop46 but greater than the diameter of circular loop 44. In the preferredembodiment, the outermost loop segment 48 has a diameter approximately0.0248 times the wavelength of the r.f. voltage and current in the coil.The diameter of loop segment 46 is approximately 0.0207 times thiswavelength and the diameter of loop segment 44 is approximately 0.0146times this wavelength. The equal radii of the semicircular ring segments40 and 42 are approximately 0.00413 times the wavelength. The effectivetransmission line lengths for loop segments 48, 46, 44, 40 and 42 arerespectively approximately 0.078, 0.065, 0.046, 0.013 and 0.013 timesthe wavelength of the r.f. current in the coil, so the total coil lengthis approximately 0.22 times the wavelength.

Capacitor 80, having a capacitive impedance, Z_(cap) =1/(j2πfC), wherej=√-1, f is the frequency of r.f. source 26, and C is the capacitance ofcapacitor 30, shifts the phase and therefore location of the voltage andcurrent distribution across the entire length of coil 24. The voltageand current distribution are shifted in coil 24 so the coil producesr.f. electric and magnetic fields which provide uniform plasma flux onthe processed surface of workpiece 32. For the preferred embodiment, thevoltage and current of coil 24 are distributed by selecting the value ofcapacitor 80 so the peak-to-peak r.f. current at coil terminal 54 is aminimum and equals the peak-to-peak r.f. current at coil terminal 52. Atthis condition, the coil has opposite polarity maximum peak-to-peak r.f.voltages at terminals 52 and 54 and the coil maximum r.f. current occursnear conductive strap 72. The distribution of r.f. voltages and currentsin the coil can be approximated by

    V.sub.pkpk (X)=V.sup.o.sub.pkpk cos  β(x+x.sup.o)! and

    I.sub.pkpk (X)=I.sup.o.sub.pkpk sin  β(x+x.sup.o)!,

where:

x is the linear distance measured from input terminal 54 of the coil,

β is the angular frequency of r.f. source 26 (i.e. 2πf) divided by c,the speed of light,

x^(o) is an offset from zero which is determined by the value of thecapacitor 80, and

V^(o) _(pkpk) and I^(o) _(pkpk) are respectively the maximum r.f.peak-to-peak voltages and currents supplied to the coil. For thepreferred embodiment of the coil, the value of capacitor 80 is selectedso x^(o) is approximately 0.15 to 0.16 times the wavelength (λ=c/f) ofthe r.f. current flowing in the coil. The distribution of the calculatedand measured r.f. voltages and currents for the preferred embodiments ofcoil 24 are respectively shown in FIGS. 5A and 5B as a function of thelength of the coil.

The magnetic flux produced by the peripheral regions of coil 24 isgreater than the magnetic flux generated by the center region of thecoil because the magnitude of the peak-to-peak r.f. currents is greaterin the peripheral segment of the coil relative to the magnitudes of thepeak-to-peak currents of the central segments. In the preferredembodiment, the maximum peak-to-peak r.f. current amplitude occurs insubstantially circular loop segment 46. The amplitudes of thepeak-to-peak r.f. currents in adjacent loop segments 44 and 48 and inloop segment 46 and the spacing of loop segments 44, 46 and 48 from eachother are such that magnetic fluxes from these three loop segments arecombined in space to provide a total magnetic flux density, just underwindow 19, having a maximum value over a relatively broad annular area,extending from between loop segments 46 and 48 to between intermediatesegment 44 and interior segments 40 and 42. The total magnetic flux isalso relatively constant as a function of an angular coordinate θ.

The angular coordinate, θ, represents the spatial angular displacementabout the center axis of chamber 10 in the counter clockwise directionfrom a phantom line 100. Terminals 60, 80, 74 and 68 are angularlyequidistant from and on one side of line 100 while terminals 62, 76, 70and 66 are angularly equidistant by the same amount from and on theother side of line 100. Hence, e.g. coil segment 48 has a spatialangular extent of slightly less than 360° from an angle θ, which isslightly greater than θ=0°, to an angle θ₂, which is slightly less thanθ=360°; and terminals 52 and 54 are at angles θ₃ and θ₄ respectivelyslightly greater and slightly less than 180°. A spatially averagedmagnetic flux which is constant along a particular coordinate value θprovides a plasma which is radially symmetric along θ. The amplitudes ofthe peak-to-peak r.f. currents in the two substantially semicircular,equal radius segments 40 and 42 are significantly less than theamplitudes of the currents in the other segments. Segments 40 and 42derive sufficient magnetic fluxes which are spatially averaged with themagnetic fluxes derived from the other segments 44, 46 and 48 so asubstantially uniform plasma flux is generated at the level of theprocessed surface of workpiece 32 across the diameter of the chamber.The amplitudes of the peak-to-peak r.f. currents in each of the segmentsare plotted in FIG. 6 as a function of angular distance θ.

From FIG. 6, the highest values of r.f. peak-to-peak current in coil 24are (1) throughout loop segment 46, (2) the portion of loop segment 48from terminal 68 (at the connection of segment 48 to segment 46 viastrap 72) to an angle θ₄, slightly less than θ=180°, i.e. for an angularextent of somewhat more than 180°, and (3) in the portion of loopsegment 44 from terminal 76 (at the connection of segment 44 to segment46 via strap 78) to θ₄, i.e. for an angular extent of somewhat less than180°. The lowest currents are at terminals 52 and 54 (where they areequal) and along interior loops 40 and 42. Because of this currentdistribution, the magnetic flux derived from the interior loop segments40 and 42 of coil 24 is substantially less than the flux from exteriorloop portions 46 and 48 to assist in providing uniform plasma flux onthe workpiece.

The electrostatic (i.e., capacitive) coupling of the voltages occurringbetween different portions of planar coil 24 (for example betweenportions of loop segments 46 and 48 at the same angular coordinateposition θ_(i)) to the plasma has been found to have an influence on theuniformity of the generated plasma flux. The capacitive coupling ofthese voltages to the plasma depends on the magnitude of thepeak-to-peak voltages occurring in the coil segments, as well as thethickness and dielectric material of window 19 which separates the coilfrom the plasma. In the preferred embodiment of the coil, the influenceof the capacitive currents produced by the r.f. voltages is minimized bycausing the highest r.f. peak-to-peak voltages to occur at terminals 52and 54. Such a result occurs because of the geometry of coil 24 and byproper selection of the value of capacitor 80, connected in series withthe coil. Interior equal length and equal radii semicircular segments 40and 42 are oriented such that terminals 52 and 54 at the ends thereofare on diametrically opposite sides of line 100. Positioning terminals52 and 54 at these locations minimizes the effect of these high r.f.peak-to-peak voltage points. This is because at any instant of time, thevoltages at terminals 52 and 54 are substantially equal to each other inamplitude but have opposite polarity. This causes the effects of the twoopposite polarity voltages to approximately cancel in the plasma.Dielectric window 19 is preferably quartz and is approximately 0.8inches thick to minimize the electrostatic coupling of the r.f. voltagesbetween different parts of coil 24 to the plasma while still providingsufficient coupling of the magnetic fields produced by the coil to theplasma.

R.f. excitation of planar coil 24 produces a substantially planar plasmahaving a relatively uniform flux completely across substrate 32,frequently shaped as a disc. Regardless of shape, substrate 32 hasexterior edge dimensions only somewhat less than the interior dimensionsof plasma processor chamber 10. Coil 24 is configured so the density ofplasma flux incident on the processed surface of substrate 32 is within±2.5% of the average plasma density across the substrate. Thisuniformity is achieved because the magnetic flux in the center portionof coil 24 is less than the magnetic flux derived from the peripheraland intermediate portions of the coil. The geometry and method of r.f.excitation of coil 24 provide a uniform plasma flux on the processedsurface of substrate 32 for a range of pressures of 1 to 100 milliTorr.

FIG. 3 is a plot of the measured ion current uniformity for thepreferred embodiment of the plasma processor chamber 10 measured 1.0centimeter above the surface of a 200 mm diameter disc shaped substratefor a variety of pressures in the range of 2.0 to 30.0 milliTorr. FromFIG. 2, there is a plasma density uniformity within ±2.5% of the averageplasma density across the substrate. FIG. 4 is a top view of a plot ofthe spatial variations in the etch rate for a 200 mm wafer semiconductoretched at 15 milliTorr using the described preferred embodiment ofplanar coil 24. From FIG. 4, the substrate is etched with a uniformityno less than 2.3%.

While there has been described and illustrated a specific embodiment ofthe invention, it will be clear that variations in the details of theembodiment specifically illustrated and described may be made withoutdeparting from the true spirit and scope of the invention as defined inthe appended claims.

We claim:
 1. A vacuum plasma processor for treating a workpiece in avacuum chamber comprising a vacuum plasma processing chamber arranged tobe responsive to a source of ionizable gas and including a holder forthe workpiece, a coil reactively coupled with the gas for exciting thegas to a plasma state capable of processing workpieces on the holder,the coil having plural turns and exciting gas to the plasma state inresponse to r.f. energization of the coil, the coil including interiorand exterior arcuate segments and first and second excitation terminalsadapted to be connected to a source of the r.f. excitation, the firstterminal being at one end of the coil and at one end of the interiorarcuate segment, the exterior arcuate segment being radially displacedfrom the interior arcuate segment, the second terminal being at one ofthe arcuate segments different from the interior arcuate segment, thecoil, chamber and workpiece being arranged to produce in the chamber amagnetic flux having substantially greater density in peripheralportions of the coil and chamber than in a center portion of the chamberand coil so a substantially uniform plasma flux is incident on aprocessed surface of the workpiece, one of the terminals of the coilbeing connected to the source of the r.f. energization by a reactance,the value of the reactance, the length of the coil and the r.f.energization having a frequency such that peak-to-peak r.f. voltagesV_(pkpk) (x) and currents I_(pkpk) (x) in the coil are approximated by

    V.sub.pkpk (x)=V.sup.o.sub.pkpk cos β(x+x.sup.o)! and I.sub.pkpk (x)=I.sup.o.sub.pkpk sin β(x+x.sup.o !,

where: x is the linear distance measured from an input terminal of thecoil connected to the source, β is a constant determined by thefrequency of the r.f. energization, x^(o) is an offset from zerodetermined by the impedance of the reactance at the frequency of ther.f. energization, and V^(o) _(pkpk) and I^(o) _(pkpk) are values of themaximum r.f. peak-to-peak voltages and currents in the coil.
 2. Thevacuum processor of claim 1 wherein a source of the r.f. source isconnected to first and second terminals of the coil such that themagnitude of the peak-to-peak r.f. voltage has a maximum value with afirst polarity at the first terminal of the coil and a maximum valuewith a second polarity at the second terminal of the coil.
 3. The vacuumprocessor of claim 1 wherein the coil includes several arcuate segmentshaving an arcuate extent of about a turn, including an outermost arcuatesegment having an arcuate extent of about a turn and a next outermostarcuate segment having an arcuate extent of about a turn, the r.f.energization being connected to the coil and the coil being configuredsuch that r.f. current in the outermost arcuate segment and the nextoutermost arcuate segment is substantially greater than current in aninterior segment of the coil.
 4. The vacuum processor of claim 1 whereina source of the r.f. energization is connected to first and secondterminals of the coil and the coil is such that the magnitude ofpeak-to-peak r.f. current at the first terminal is approximately equalto the peak-to-peak r.f. current at the second terminal, the equalcurrents at the first and second terminals having amplitudes lower thanany other currents in the coil.
 5. The vacuum processor of claim 1further including a reactance connected in series with the coil and asource of the r.f. excitation, the reactance having a value andconnections to the coil and source and the coil having a configurationso there are approximately equal magnitude peak-to-peak r.f. currents atexcitation terminals of the coil.
 6. The vacuum processor of claim 1wherein first and second excitation terminals of the coil are located ina center region of the coil, the first and second excitation terminalsbeing respectively connected to first and second arcuate segments havingan arcuate extent of about one half a turn, the arcuate segments havingan arcuate extent of about one half a turn having about the samedimensions and arranged substantially concentrically such that the firstand second terminals are located next to each other.
 7. The vacuumprocessor of claim 6 wherein each of the first and second arcuatesegments having an arcuate extent of about one half a turn has aneffective linear length of about 0.026 times the wavelength of r.f.current flowing in the coil.
 8. The vacuum processor of claim 7 whereinthe coil has an outermost arcuate turn having an effective length thatis approximately 0.078 times the wavelength of r.f. current flowing inthe coil and is connected in series to one of the segments having anarcuate extent of about one half a turn such that the instantaneous r.f.current flows in the same direction in both said one segments having anarcuate extent of about one half a turn and said outermost arcuate turn.9. The vacuum processor of claim 8 wherein the outermost arcuate turn isconnected to said one inner segment by a straight length of conductivestrap electrically insulated from the coil except at its ends.
 10. Thevacuum processor of claim 7 wherein the coil includes first and secondadditional substantially concentric arcuate segments each having anarcuate extent of about a turn and connected in series to the outermostarcuate segment, the additional substantially concentric arcuatesegments having effective lengths approximately 0.065 times thewavelength of the current flowing in the coil and approximately 0.046times the wavelength of the current flowing in the coil.
 11. The vacuumprocessor of claim 6 wherein the first and second excitation terminalsof the coil are terminals of innermost arcuate segments of the coilhaving an arcuate extent of about one half a turn and respectivelyforming the first and second arcuate segments, the innermost arcuatesegments being located on diametrically opposite sides of a centerlinewhich cuts the coil in half, the coil being arranged and connected tothe r.f. excitation source so instantaneous r.f. voltages at the firstand second excitation terminals have substantially equal magnitude butare of opposite polarity.
 12. A vacuum plasma processor for treating aworkpiece in a vacuum chamber comprising a vacuum plasma processingchamber arranged to be responsive to a source of ionizable gas andincluding a holder for the workpiece, a coil reactively coupled with thegas for exciting the gas to a plasma state capable of processingworkpieces on the holder, the coil having plural turns and exciting gasto the plasma state in response to r.f. energization of the coil, thecoil including interior and exterior arcuate segments and first andsecond excitation terminals adapted to be connected to a source of ther.f. excitation, the first terminal being at one end of the coil and atone end of the interior arcuate segment, the exterior arcuate segmentbeing radially displaced from the interior arcuate segment, the secondterminal being at one of the arcuate segments different from theinterior arcuate segment, the coil, chamber and workpiece being arrangedto produce in the chamber a magnetic flux having substantially greaterdensity in peripheral portions of the coil and chamber than in a centerportion of the chamber and coil so a substantially uniform plasma fluxis incident on a processed surface of the workpiece, the net magneticfield generated by an outermost arcuate turn of the coil and a nextoutermost arcuate turn of the coil being substantially the same for allangular orientations and radii in the vicinity of the two outermostcoils.
 13. A vacuum plasma processor for treating a workpiece in avacuum chamber comprising a vacuum plasma processing chamber arranged tobe responsive to a source of ionizable gas and including a holder forthe workpiece, a coil reactively coupled with the gas for exciting thegas to a plasma state capable of processing workpieces on the holder,the coil having plural turns and exciting gas to the plasma state inresponse to r.f. energization of the coil, the coil including interiorand exterior arcuate segments and first and second excitation terminalsadapted to be connected to a source of the r.f. excitation, the firstterminal being at one end of the coil and at one end of the interiorarcuate segment, the exterior arcuate segment being radially displacedfrom the interior arcuate segment, the second terminal being at one ofthe arcuate segments different from the interior arcuate segment, thecoil, chamber and workpiece being arranged to produce in the chamber amagnetic flux having substantially greater density in peripheralportions of the coil and chamber than in a center portion of the chamberand coil so a substantially uniform plasma flux is incident on aprocessed surface of the workpiece, an outermost arcuate turn of thecoil and a next outermost arcuate turn of the coil having a netelectrostatic coupling of r.f. voltages to the plasma that is smallrelative to the net electrostatic coupling of r.f. voltages to theplasma by inner arcuate segments of the coil.
 14. An r.f. vacuum plasmaprocessor for treating a workpiece in a vacuum chamber with a plasmathat is adapted to be excited by a source having an r.f. frequency, theprocessor comprising a coil reactively coupled with a gas in the chamberto excite the gas to the plasma, the coil having first and secondexcitation terminals and plural turns, the coil being arranged to excitegas in the chamber to a plasma state in response to energization of thecoil by the r.f. source, a circuit connected to the excitation terminalsand adapted to be connected to the source, the coil having a lengthbetween the terminals and the circuit being such that there aresubstantial current and voltage variations at the r.f. frequency alongthe coil length, the circuit elements and the coil geometry being suchthat the current has a relatively low peak-to-peak value in proximity tothe excitation terminals and relatively high values in portions of thecoil removed from the excitation terminals.
 15. The vacuum plasmaprocessor of claim 14 wherein the coil includes peripheral and interiorportions, the peripheral and interior portions being radially displacedfrom each other, the excitation terminals being at the interior portionsof the coil, the peripheral portions being the portion removed from theexcitation terminals.
 16. The vacuum plasma processor of claim 14wherein the coil includes first and second interior segments and anotherportion outside the interior segments, each interior segment having afurther terminal connected to said another portion, the excitationterminals being at portions of the interior segments displacedsubstantially from the further terminals.
 17. The vacuum plasmaprocessor of claim 16 wherein said another portion includes seriesconnected plural turns, one of the turns being a peripheral turn havinga first terminal, another of the turns being an intermediate turn havinga second terminal, the first terminal being connected to said furtherterminal of one of the interior segments, the second terminal beingconnected to said further terminal of the other interior segment. 18.The vacuum plasma processor of claim 17 wherein another of the turns isa further turn located between and connected to the intermediate andperipheral turns.
 19. The vacuum plasma processor of claim 18 whereinthe coil is designed to be used with a workpiece having a circularsurface to be processed, the circular surface having a predetermineddiameter, the chamber and coil having common axes of symmetry, thechamber being arranged so the center of the workpiece is adapted to belocated on the axes, the intermediate and further turns respectivelyhaving diameters greater and less than the workpiece diameter.
 20. Thevacuum plasma processor of claim 14 wherein the chamber and coil arearranged so there is a substantially uniform plasma flux across anentire processed surface of the workpiece.
 21. The vacuum plasmaprocessor of claim 14 wherein the circuit elements and the coil geometryare such that r.f. current flowing in the coil has peak-to-peak equalvalues at the excitation terminals, the current having minimum values atthe excitation terminals and higher values in the portions of the coilremoved from the excitation terminals, the peak-to-peak r.f. voltagehaving a maximum value at the excitation terminals.
 22. The vacuumprocessor of claim 14 wherein the coil is connected to the source of ther.f. energization by a reactance, the value of the reactance included inthe circuit, the length of the coil and the r.f. energization having afrequency such that peak-to-peak r.f. voltages V_(pkpk) (x) and currentsI_(pkpk) (x) in the coil are approximated by

    V.sub.pkpk (x)=V.sup.o.sub.pkpk cos β(x+x.sup.o)! and I.sub.pkpk (x)=I.sup.o.sub.pkpk sin β(x+x.sup.o)!,

where: x is the linear distance measured from an input terminal of thecoil connected to the source, β is a constant determined by thefrequency of the r.f. energization, x^(o) is an offset from zerodetermined by the impedance of the reactance at the frequency of ther.f. energization, and V^(o) _(pkpk) and I^(o) _(pkpk) are values of themaximum r.f. peak-to-peak voltages and currents in the coil.
 23. Ther.f. vacuum plasma processor of claim 14 wherein the portions of thecoil removed from the excitation terminals are peripheral portions ofthe coil.
 24. An r.f. vacuum plasma processor for treating a workpiecein a vacuum chamber with a plasma that is adapted to be excited by asource having an r.f. frequency, the processor comprising a coilreactively coupled with a gas in the chamber to excite the gas to theplasma, the coil having first and second excitation terminals and pluralturns, the coil being arranged to excite gas in the chamber to a plasmastate in response to energization of the coil by the r.f. source, acircuit connected to both of the excitation terminals and adapted to beconnected to the source, the coil having a length between the terminalsand the circuit being such that there are substantial current andvoltage variations at the r.f. frequency along the coil length, both ofthe excitation terminals being at the interior portions of the coil. 25.The vacuum plasma processor of claim 24 wherein the coil includes firstand second interior segments and another portion outside the interiorsegments, each interior segment having a further terminal connected tosaid another portion, the excitation terminals being at portions of theinterior segments displaced substantially from the further terminals.26. The vacuum plasma processor of claim 25 wherein said another portionincludes series connected plural turns, one of the turns being aperipheral turn having a first terminal, an other of the turn s being anintermediate turn having a second terminal, the first terminal beingconnected to said further terminal of one of the interior segments, thesecond terminal being connected to said further terminal of the otherinterior segment.
 27. The vacuum plasma processor of claim 26 whereinanother of the turns is a further turn located between and connected tothe intermediate and peripheral turns.
 28. The vacuum plasma processorof claim 27 wherein the coil is designed to be used with a workpiecehaving a circular surface to be processed, the circular surface having apredetermined diameter, the chamber and coil having common axes andsymmetry, the chamber being arranged so the center of the workpiece isadapted to be located on the axes, the intermediate and further turnsrespectively having diameters greater and less than the workpiecediameter.
 29. The vacuum plasma processor of claim 24 wherein thechamber and coil are arranged so there is a substantially uniform plasmaflux across an entire processed surface of the workpiece.
 30. The vacuumplasma processor of claim 24 wherein elements of the circuit and thecoil geometry are such that r.f. current flowing in the coil haspeak-to-peak equal values at the excitation terminals, the currenthaving minimum values at the excitation terminals and higher values inthe peripheral portions of the coil, the peak-to-peak r.f. voltagehaving a maximum value at the excitation terminals.
 31. The vacuumprocessor of claim 24 wherein the coil is connected to the source of ther.f. energization by a reactance, the value of the reactance included inthe circuit, the length of the coil and the r.f. energization having afrequency such that peak-to-peak r.f. voltages V_(pkpk) (x) and currentsI_(pkpk) (x) in the coil are approximated by

    V.sub.pkpk (x)=V.sup.o.sub.pkpk cos β(x+x.sup.o)! and I.sub.pkpk (x)=I.sup.o.sub.pkpk sin β(x+x.sup.o)!,

where: x is the linear distance measured from an input terminal of thecoil connected to the source, β is a constant determined by thefrequency of the r.f. energization, x^(o) is an offset from zerodetermined by the impedance of the reactance at the frequency of ther.f. energization, and V^(o) _(pkpk) and I^(o) _(pkpk) are values of themaximum r.f. peak-to-peak voltages and currents in the coil.